Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-05-16
2010-06-15
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S704000, C438S745000, C438S692000
Reexamination Certificate
active
07737043
ABSTRACT:
There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, and a method of producing a compound semiconductor crystal. In the inspection method of the surface of the compound semiconductor substrate, the surface roughness Rms of the compound semiconductor substrate is measured using an atomic force microscope at the pitch of not more than 0.4 nm in a scope of not more than 0.2 μm square. The surface roughness Rms of the compound semiconductor substrate measured by the inspection method is not more than 0.2 nm.
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Horie Yusuke
Nishiura Takayuki
Okamoto Takatoshi
Okita Kyoko
Tanaka So
Luu Chuong A.
McDermott Will & Emery LLP
Sumitomo Electric Industries Ltd.
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