Inspection method for semiconductor memory

Details Inspection method for semiconductor memory Inspection method for semiconductor memory

2011-07-19

2011-07-19

Valone, Thomas (Department: 2858)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

For fault location

C324S211000, C324S527000

Reexamination Certificate

active

07982466

ABSTRACT:
A method for inspecting a semiconductor memory having nonvolatile memory cells using ferroelectric capacitors is disclosed which comprises, after shelf-aging the ferroelectric capacitor in a first polarized state, the steps of: (a) writing a second polarized state opposite to the first polarized state; (b) shelf-aging the ferroelectric capacitor in the second polarized state; and (c) reading the second polarized state. The temperature or voltage in the step (a) is lower than the temperature or voltage in the step (c). This method for inspecting a semiconductor memory enables to evaluate the imprint characteristics in a short time.

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