Inspection method and inspection system using charged...

Details Inspection method and inspection system using charged... Inspection method and inspection system using charged...

2005-08-16

2005-08-16

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

06931620

ABSTRACT:
Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.

REFERENCES:
patent: 5430305 (1995-07-01), Cole et al.
patent: 5523694 (1996-06-01), Cole, Jr.
patent: 5640539 (1997-06-01), Goishi et al.
patent: 5781017 (1998-07-01), Cole et al.
patent: 6195773 (2001-02-01), Wada
patent: 6204075 (2001-03-01), Kikuchi
patent: 59-155941 (1984-09-01), None
patent: 5-258703 (1993-10-01), None
patent: 6-326165 (1994-11-01), None
patent: 7-288096 (1995-10-01), None
patent: 8-160109 (1996-06-01), None
patent: 11-121561 (1999-04-01), None
Cole “A New Technique for Imaging the Logic State of Passivated Conductors: Biased Resistive Contrast Imaging”, IEEE, 1990.

Affiliated with

Also associated with

Rating

Inspection method and inspection system using charged... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Inspection method and inspection system using charged..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inspection method and inspection system using charged... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3517109