Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-02-08
2005-02-08
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S712000, C438S720000
Reexamination Certificate
active
06852636
ABSTRACT:
A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber.
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Beyer Weaver & Thomas LLP
Lam Research Corporation
Norton Nadine G.
Umez-Eronini Lynette T.
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