Insitu formation of inverse floating gate poly structures

Details Insitu formation of inverse floating gate poly structures Insitu formation of inverse floating gate poly structures

2007-08-02

2010-06-15

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S257000, C438S593000, C438S594000

Reexamination Certificate

active

07737031

ABSTRACT:
Briefly, in accordance with one or more embodiments, a method of making an inverse-t shaped floating gate in a non-volatile memory cell or the like is disclosed.

REFERENCES:
patent: 5298436 (1994-03-01), Radosevich et al.
patent: 7033957 (2006-04-01), Shiraiwa et al.
patent: 2006/0252193 (2006-11-01), Rabkin et al.
patent: 2007/0122973 (2007-05-01), Lee
patent: 2001-0065186 (2001-07-01), None
Sandhu, Gurtej, et al; Semiconductor Constructions, And Methods Of Forming Semiconductor Constructions And Flash Memory Cells; USPTO U.S. Appl. No. 11/512,781, filed Aug. 29, 2006.

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