Insitu faceting during deposition

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419212, 20419217, 20419232, 20419237, 438584, 438675, C23C 1434

Patent

active

059976993

ABSTRACT:
A semiconductor substrate having thereon a surface including features to be filled is placed in a vacuum chamber having a high density plasma source and a target of material to be deposited. A vacuum is drawn, and a plasma is struck in a gas by means of the high density plasma source. The substrate is then biased to cause ions from the plasma to bombard the substrate with energies sufficient to facet top corners of features on the surface of the substrate. After a desired amount of faceting has occurred, the target is biased to cause ions from the plasma to sputter the target, resulting in a plasma comprised of target material and the gas. The substrate is then biased sufficiently to provide a near perpendicular flow of ions of target material to the substrate, but at sufficiently low energy to deposit a film of the material to be deposited. The substrate bias may be held sufficiently high to prevent or reduce buildup on the facets. The substrate bias may be adjusted during the deposition process to allow increased deposition on the facets. Alternatively, the target may be biased from the start, resulting in formation of a plasma comprised of both the gas and the material to be deposited. Ions from this plasma may then be used to first facet the surface of the substrate by employing a high negative substrate bias, then to deposit a film of the material to be deposited by employing a lower negative substrate bias.

REFERENCES:
patent: 4839306 (1989-06-01), Wakamatsu
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5108570 (1992-04-01), Wang
patent: 5371042 (1994-12-01), Ong
Rossnagel et al. "Metal ion deposition from ionized magnetron sputtering discharge", J. Vac. Sci. Technol. B, vol. 12, No. 1, Feb. 1994.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Insitu faceting during deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insitu faceting during deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insitu faceting during deposition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-819776

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.