Inside edge defined, self-filling (IESF) die for crystal growth

Details Inside edge defined, self-filling (IESF) die for crystal growth Inside edge defined, self-filling (IESF) die for crystal growth

1992-03-04

1993-11-30

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG65, 156DIG88, 156DIG115, B01D 900

Patent

active

052661512

ABSTRACT:
A method and system for growing elongated crystalline materials. Crystalline melt rises through a capillary. At the upper end of the capillary is a die having a die tip. A seed crystal engages and draws the melt through the die tip. The die tip is characterized by a top surface and an aperture therein. The top surface is non-wetting with reference to the crystalline melt. The geometry of the aperture or inner edge defines the geometry of the crystalline filament formed.

REFERENCES:
patent: 2791813 (1957-05-01), Delano
patent: 3765843 (1973-10-01), Labelle, Jr. et al.
patent: 3846082 (1974-11-01), Labelle, Jr. et al.
patent: 3853489 (1974-12-01), Bailey
patent: 3915662 (1975-10-01), Labelle et al.

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