Input protective circuit having a diffusion resistance layer

Details Input protective circuit having a diffusion resistance layer Input protective circuit having a diffusion resistance layer

1997-04-10

1999-08-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257357, 257360, 257363, H01L 2362

Patent

active

059329173

ABSTRACT:
An input protective circuit includes a resistance element for connecting the input terminal and internal circuit of a semiconductor integrated circuit, and a field effect transistor for discharging a surge input to the ground potential. Adjacent diffusion layer regions consisting of a diffusion resistance layer corresponding to the resistance element and an impurity diffusion layer corresponding to the drain or source of the field effect transistor and connected adjacent to each other are formed by double diffusion using ion implantation.

REFERENCES:
patent: 5477407 (1995-12-01), Kobayashi et al.
patent: 5498892 (1996-03-01), Walker et al.
patent: 5705441 (1998-01-01), Wang et al.
patent: 5777368 (1998-07-01), Wu et al.

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