Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-27
1997-01-14
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257358, 257361, 257362, 257363, H01L 2362
Patent
active
055942652
ABSTRACT:
According to the invention, a well region is formed on a semiconductor substrate. An n.sup.+ -type first semiconductor region is formed in the well region, and an input pad for receiving an external signal is connected near the first semiconductor region. This input pad is connected to an input circuit of an integrated circuit constituted by an inverter circuit and to an external terminal for receiving an external signal. N.sup.+ -type second semiconductor regions are formed in the well region located on both sides of the first semiconductor region. A ground potential Vss is applied to these second semiconductor regions. A p.sup.+ -type third semiconductor region is formed around these second semiconductor regions in the well region. The ground potential is applied to the third semiconductor region. Therefore, a parallel circuit formed by a parasitic transistor and a parasitic diode is formed between the input pad and the ground potential. The parasitic transistor is turned on upon electrostatic discharge, and the parasitic diode is turned on when a negative potential for test is applied to the input pad, thereby preventing an erroneous operation of a transistor arranged on the semiconductor substrate.
REFERENCES:
patent: 3787717 (1974-01-01), Fischer et al.
patent: 4688065 (1987-08-01), Kinoshita et al.
patent: 4757363 (1988-07-01), Bohm et al.
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5010380 (1991-04-01), Avery
patent: 5016078 (1991-05-01), Tailliet
patent: 5072271 (1991-12-01), Shimizu et al.
Momodomi, "A Circular Output Protection Device Using Bipolar Action", 25th Annual Proceedings-Reliability Physics, Apr., 1987, pp. 169-173.
Fujii Syuso
Numata Kenji
Shimizu Mitsuru
Wada Masaharu
Kabushiki Kaisha Toshiba
Loke Steven H.
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