Input protection circuit for use in semiconductor device having

Details Input protection circuit for use in semiconductor device having Input protection circuit for use in semiconductor device having

1996-06-24

1999-04-20

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257357, 257358, 257359, 257361, 257363, 361 90, 361 94, 361101, 361196, 361207, H01L 2990, H01L 2704

Patent

active

058959580

ABSTRACT:
In an input protection circuit, a bipolar protection device is constituted of a semiconductor substrate of a first conductivity type, a first diffused layer of a second conductivity type formed in the substrate and connected to an input signal pad, a second diffused layer of the second conductivity type formed in the substrate to extend in parallel to the first diffused layer but separately from the first diffused layer by a first space, and a third diffused layer of a high impurity concentration and of the first conductivity type formed in the first space in the substrate to extend in parallel to the first and second diffused layers, in junction with the second diffused layer but separately from the first diffused layer. When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized. Thus, increase of a leakage current caused because hot carriers generated by application of an overvoltage were injected into a field oxide film, can be prevented.

REFERENCES:
patent: 4602267 (1986-07-01), Shirato

Affiliated with

Also associated with

Rating

Input protection circuit for use in semiconductor device having does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Input protection circuit for use in semiconductor device having , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Input protection circuit for use in semiconductor device having will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2249651