Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-07-27
1997-12-09
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257358, 257360, 257361, 257363, H01L 2362
Patent
active
056963980
ABSTRACT:
An input protection circuit comprises an internal circuit and an input terminal, between which a pair of rectifying devices are interposed with polygonal diffusion regions of one and the other conduction types, which diffusion regions are formed longer along the width thereof orthogonal to the direction of current flow in the wiring than along the direction of current flow. The width of the contacts between said wiring and said diffusion regions is greater than the width of the wiring not having the contacts, thereby achieving a high electrostatic breakdown voltage.
REFERENCES:
patent: 4928157 (1990-05-01), Matsunaga et al.
patent: 5087955 (1992-02-01), Futami
patent: 5304839 (1994-04-01), Chen et al.
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid D.
Wallace Walencia Martin
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