Input/output protection circuit having an SOI structure

Details Input/output protection circuit having an SOI structure Input/output protection circuit having an SOI structure

1997-10-08

2000-09-12

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, H01L 2360

Patent

active

061181544

ABSTRACT:
An I/O protection circuit includes a P-channel MOS transistor connected between an input terminal and a power supply line, and an N-channel MOS transistor connected between the input terminal and a ground line. Gate electrodes of both the transistors are floated. The transistors may be replaced with gate diodes. Further, gate electrodes may be formed from the same layer as a gate electrode provided for field shielding.

REFERENCES:
patent: 3555374 (1971-01-01), Usuda
patent: 4282556 (1981-08-01), Ipri
patent: 4745450 (1988-05-01), Hartranft et al.
patent: 4893159 (1990-01-01), Suzuki et al.
patent: 4989057 (1991-01-01), Lu
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5510728 (1996-04-01), Huang
patent: 5610426 (1997-03-01), Asai et al.
patent: 5841172 (1998-11-01), Morishita et al.
Mansun Chan et al, "SOI/Bulk Hybrid Technology on SIMOX Wafers for High Performance Circuits with Good ESD Immunity", IEEE Electron Device Letters, vol. 16, No. 1, Jan. 1995, pp. 11-13.

Affiliated with

Also associated with

Rating

Input/output protection circuit having an SOI structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Input/output protection circuit having an SOI structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Input/output protection circuit having an SOI structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-98457