Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-26
1997-07-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
330260, 330298, H01L 2362
Patent
active
056506520
ABSTRACT:
A protection circuit includes a first protection circuit, which is coupled between a signal output terminal of an internal circuit and an external connection terminal and which prevents an abnormal voltage applied to the external connection terminal from being input to the signal output terminal. The protection circuit also includes a second protection circuit, which is coupled between a signal input terminal of the internal circuit and the external connection terminal and which prevents the abnormal voltage applied to the external connection terminal from being input to the signal input terminal. The signal input terminal is operatively coupled to the signal output terminal via the first and second protection circuit and has an impedance higher than that of the signal output terminal.
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patent: 4733285 (1988-03-01), Ishioka et al.
patent: 4990802 (1991-02-01), Smooha
Avery, "A Review of Electrostatic Discharge Mechanisms and On-Chip Protection Techniques to Ensure Device Reliability," Journal of Electrostatics, Feb. 24, 1990, No. 2, pp. 111-130.
"Deux Amplificateurs de 20 W a Symetrie Quasi-Complementaire," Toute Electronique, Dec. 1970, vol. 37, No. 351, pp. 569-570.
Gotoh Kunihiko
Kobayashi Osamu
Mizutani Toru
Fujitsu Limited
Ngo Ngan V.
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