Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1997-10-28
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257141, 257133, 257360, 257363, 361 91, 361 56, 361111, H01L 2363, H01L 2976, H02H 900, H02H 322
Patent
active
056820470
ABSTRACT:
An input/output structure includes a microelectronic device connected in circuit between a contact pad and a reference potential, and a thyristor device for protecting the microelectronic device from electrostatic discharge. The thyristor device includes first and second terminals connected to the contact pad and to the reference potential respectively, a PNPN thyristor structure including a first P-region, a first N-region, a second P-region and a second N-region disposed in series between the first and second terminals, and an electrode for inducing an electric field into the second P-region. The induced electric field increases the number of charge carriers in the second P-region, and enables the device to be triggered at a lower voltage applied between the first and second terminals. The electrode includes an insulated gate, and can be connected to either the first or second terminal. The gate can include a thick field oxide layer, or a thin oxide layer to further reduce the triggering voltage. A differentiator including a capacitor connected between the first terminal and the electrode and a resistor connected between the second terminal and the electrode prevents false triggering during normal operation. A metal interconnection layer includes an anode section which is connected to the N-region and to the second terminal, and a cathode section which is connected to the P-region, the first terminal and the electrode, such that the cathode section laterally surrounds the anode section.
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Consiglio Rosario
Ku Yen-Hui
Abraham Fetsum
Fahmy Wael
LSI Logic Corporation
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