Input-output buffer circuit

Electronic digital logic circuitry – Tri-state – With field-effect transistor

Reexamination Certificate

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Details

C326S081000, C326S086000

Reexamination Certificate

active

06496036

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to an input-output buffer circuit effecting signal input-output control normally even when a signal having a voltage higher than a power supply voltage of the input-output buffer circuit is inputted from an external source.
BACKGROUND OF THE INVENTION
As the semiconductor fabrication process uses finer line widths, the power supply voltage for driving a semiconductor integrated circuit (hereafter simply referred to as IC) implemented as a single chip tends to become lower. On the other hand, a commercially available electronic device is constructed in many cases by mounting a plurality of ICs having different specifications on the same printed circuit board. In some cases, therefore, ICs driven with high voltages according to conventional specifications and ICs driven with low voltages according to current and future trends are present on the same electronic device. In this case, an IC is often supplied with an input signal having a voltage higher than a power supply voltage of the IC itself.
In general, an IC has an input-output buffer circuit for effecting the signal input-output control in a stage immediately preceding its output terminal. Signals inputted and outputted via the external terminal pass through the input-output buffer circuit.
FIG. 5
is a circuit diagram showing a conventional input-output buffer circuit and its operation.
The IC
100
has an external terminal
17
connected to a signal line
9
. In a stage immediately preceding the external terminal
17
, the IC
100
has an input-output buffer circuit which includes a PMOS transistor MP and an NMOS transistor MN forming an output driver, an input buffer
16
for inputting a signal fed from the external terminal
17
, a NAND gate
31
, a NOR gate
32
, and an inverter
33
.
The PMOS transistor MP is connected at its source to a power supply terminal
12
, and connected at its drain to the external terminal
17
. The NMOS transistor MN is connected at its source to the ground, and connected at its drain to the external terminal
17
.
The NOR gate
32
is supplied at its first input terminal with output data and supplied at its second input terminal with an output enable signal. An output terminal of the NOR gate
32
is connected to the NMOS transistor MN at its gate. The inverter
33
is supplied with the output enable signal and supplies its inverted output to a first input terminal of the NAND gate
31
. A second input terminal of the NAND gate
31
is supplied with the output data. An output terminal of the NAND gate
31
is connected to the PMOS transistor MP at its gate.
Operation of the input-output buffer circuit will now be explained. First, in output mode, i.e. when the output enable signal has logic level “L” (low), output data of a logic level “H” turns on the PMOS transistor MP and turns off the NMOS transistor MN. At this time, therefore, a potential equivalent to a power supply voltage fed from the power supply terminal
12
is supplied to the output terminal
17
. A signal of the logic level “H” is thus outputted.
On the other hand, output data of a logic level “L” turns off the PMOS transistor MP and turns on the NMOS transistor MN. Therefore, the external terminal
17
becomes equal to a ground potential, and a signal of a logic level “L” is outputted. In other words, when the output enable signal has a logic level “L”, the signal of the logic level indicated by the output data is outputted from the external terminal
17
as it is via mutually connected drains of the PMOS transistor MP and the NMOS transistor MN.
On the other hand, in input mode, i.e. when the output enable signal is provided with a logic level “H” (high), both the PMOS transistor MP and the NMOS transistor MN turn off. In other words, the external terminal
17
assumes a high impedance state. Irrespective of the logic state of the output data, the signal outputted to the outside assumes an indefinite state. In this state, a signal inputted from the outside to the external terminal
17
is inputted to an input buffer
16
and processed as input data.
As illustrated, the external terminal
17
of the IC
100
is connected to an external terminal
51
of another IC
200
via the signal line
9
. A signal outputted from an input-output buffer circuit
56
included in the IC
200
is inputted to the external terminal
17
. The internal circuit of the IC
200
is driven with a voltage higher than the power supply voltage with which the internal circuit of the IC
100
is driven. In
FIG. 5
, a power supply voltage supplied from a power supply terminal
11
is higher than the power supply voltage from the power supply terminal
12
. In some cases, therefore, a signal having a voltage higher than the drive power supply voltage of the IC
100
, i.e., a signal having a voltage higher than the voltage fed from the power supply terminal
12
is inputted to the IC
100
.
If the drive power supply voltage of the IC
200
, i.e., a signal having a voltage supplied from the power supply terminal
11
is inputted to the external terminal
17
, then a current flows to the power supply terminal
12
through a parasitic diode
15
of the PMOS transistor MP as illustrated. This current makes the power supply voltage supplied to various circuits in the IC
100
unstable, and causes false operation or destruction of the PMOS transistor MP.
In the conventional input-output buffer circuit, a power supply terminal
13
for supplying a voltage having the same potential as the drive power supply voltage of the IC
200
is provided in the IC
100
. The voltage fed from the power supply terminal
13
is applied to the PMOS transistor MP at its back gate. As a result, the external terminal
17
becomes equal in potential to the back gate of the PMOS transistor MP. A current is prevented from flowing to the power supply terminal
12
through the parasitic diode
15
.
In the conventional input-output buffer circuit, however, a voltage higher than the voltage applied to other transistors included in the internal circuit is applied to the drains of the PMOS transistor MP and the NMOS transistor MN which form the output driver. Therefore, it is necessary to select a transistor having a high breakdown voltage as each of the PMOS transistor MP and the NMOS transistor MN. Furthermore, with the advance of smaller scale processes, implementation itself of transistors having a high breakdown voltage also becomes difficult.
Furthermore, since the back gate potential of the PMOS transistor MP becomes higher than the potential of the source connected to the power supply terminal
12
, the transistor capability of the PMOS transistor MP becomes lower. For achieving a drive capability equivalent to that of ordinary transistors, therefore, it is necessary to increase the transistor size. Furthermore, there is a problem that the IC
100
needs the power supply terminal
13
for supplying the high voltage apart from the power supply terminal
12
for supplying the drive power supply voltage of the internal circuit.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide an input-output buffer circuit to which an input signal having a potential higher than the drive power supply voltage can be inputted without using high breakdown voltage transistors.
The above described problems are solved and the object is achieved by the following aspects of the present invention. The input-output buffer circuit according to one aspect of the present invention includes an input buffer; a PMOS transistor and an NMOS transistor for forming an output buffer, drains of the PMOS transistor and the NMOS transistor being connected together; an output switchover circuit for switching an output mode for outputting output data from an external terminal to outside over to an input mode for inputting input data from the external terminal to the input buffer, and vice versa, according to an output enable signal; and a resistor disposed on a current path between the drains of the PMOS transistor and the NMOS transistor and the

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