Input circuit of a semiconductor device

Details Input circuit of a semiconductor device Input circuit of a semiconductor device

1991-01-28

1993-05-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257546, H01L 2906

Patent

active

052084744

ABSTRACT:
An input circuit of a semiconductor device includes a P type well formed on the main surface of a semiconductor substrate, and an N type region formed on the main surface in the P type well. A P-N junction is formed by the N type region and the P type well. An input voltage is applied to the N type region, which input voltage is applied to an internal circuit formed on the semiconductor substrate. When the P-N junction is rendered conductive by an application of an excessive voltage to the input voltage, the current caused by the excessive voltage is absorbed to the supply potential through the P type region formed in the P well.

REFERENCES:
patent: 4616243 (1986-10-01), Minato et al.
patent: 4868705 (1989-09-01), Shiochi et al.
patent: 4881113 (1989-11-01), Momodomi et al.
patent: 4922371 (1990-05-01), Gray et al.
patent: 4980746 (1990-12-01), Harrington III
patent: 4996626 (1991-02-01), Say
patent: 5079613 (1992-01-01), Sawada et al.
patent: 5097310 (1992-03-01), Eimori et al.
Yamagata, et al., "The Effect of the Undershoot of the Input Signal in Dynamic RAM", LSI Research and Development Laboratory, Mitsubishi Electric Corporation (1989).

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