Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2005-06-14
2005-06-14
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S189050, C365S225700
Reexamination Certificate
active
06906968
ABSTRACT:
An input buffer of a semiconductor memory device includes a first buffer block for buffering an input data through a delay path selected from a plurality of delay paths, and a second buffer block for buffering an input data strobe signal through a delay path selected from a plurality of delay paths, wherein the plurality of delay paths of the first buffer block and the plurality of delay paths of the second buffer block are identically formed by the same devices, and the corresponding delay paths are selected from the plurality of delay paths according to the same selecting signals. Although the input buffer fails to obtain a margin of a data setup and hold time in an input/output sense amplifier due to variations of the data setup and hold time by maximum and minimum values of tDQSS in a write operation mode, the input buffer can easily obtain the margin of the data setup and hold time in response to a special test mode signal.
REFERENCES:
patent: 5986968 (1999-11-01), Toda et al.
patent: 2003/0086303 (2003-05-01), Jeong
Kim Kwang Hyun
Yang Sun Suk
Heller Ehrman White and McAuliffe LLP
Hoang Huan
Hynix / Semiconductor Inc.
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