Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2005-02-07
2010-02-02
Gurley, Lynne A. (Department: 2811)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C257SE21387
Reexamination Certificate
active
07655529
ABSTRACT:
A wafer comprising at least one emitter-up Heterojunction Bipolar Transistor (HBT) and at least one emitter-down HBT on a common InP based semiconductor wafer. Isolation and N-type implants into the device layers differentiate an emitter-down HBT from an emitter-up HBT. The method for preparing a device comprises forming identical layers for all HBTs and performing ion implantation to differentiate an emitter-down HBT from an emitter-up HBT.
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Chen Mary
Sokolich Marko
Gurley Lynne A.
HRL Laboratories LLC
Ladas & Parry
Matthews Colleen A
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