Inlet manifold and methods for increasing gas dissociation and f

Details Inlet manifold and methods for increasing gas dissociation and f Inlet manifold and methods for increasing gas dissociation and f

1987-08-14

1989-08-08

Pianalto, Bernard

Coating apparatus

Gas or vapor deposition

118 501, 118725, 118728, C23C 1600

Patent

active

048542636

ABSTRACT:
An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

REFERENCES:
patent: 4354909 (1982-10-01), Takagi et al.
patent: 4637853 (1987-01-01), Bumble et al.
patent: 4668365 (1987-05-01), Foster et al.
Fujita et al, "Silicon Nitride Films by Plasma-CVD from SiH.sub.4 -N.sub.2 and SiF.sub.4 -N.sub.2 -H.sub.2 Gas Mixtures", 1984 IEDM, pp. 630-633.
Dun et al, "Mechanisms of Plasma-Enhanced Silicon Nitride Deposition Using SiH.sub.4 /N.sub.2 Mixture", J. Electrochem. Soc: Solid-State Science and Technology, Jul. 1981, vol. 128, No. 7, pp. 1555-1563.
Claassen, "Ion Bombardment-Induced Mechanical Stress in Plasma-Enhanced Deposited Silicon Nitride and Silicon Oxynitride Films", Plasma Chemistry & Plasma Processing, vol. 7, No. 1, 1987, pp. 109-124.

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