Infrared temperature control of Czochralski crystal growth

Details Infrared temperature control of Czochralski crystal growth Infrared temperature control of Czochralski crystal growth

1975-12-04

1977-11-15

Yudkoff, Norman

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23273SP, 156617SP, 356 72, B01J 1718

Patent

active

040584291

ABSTRACT:
A method and apparatus for controlling the diameter of single crystals grown by the Czochralski process in which an infrared sensor determines the temperatures of the melt adjacent to the crystal and a control circuit compares an average of these temperatures to a reference temperature to provide an error signal which controls the inductive heating of the melt.

REFERENCES:
patent: 2979386 (1961-04-01), Shockley et al.
patent: 3284172 (1966-11-01), Binder
patent: 3493770 (1970-02-01), Dessauer et al.
patent: 3621213 (1971-11-01), Jen
Sutcliffe, et al., "Temperature Control System for a Silicon Pulling Furnace," Review of Scientific Instruments, vol. 27, No. 8, p. 656, (1956).

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