Infrared ray detecting type imaging device

Details Infrared ray detecting type imaging device Infrared ray detecting type imaging device

2006-01-10

2006-01-10

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S467000

Reexamination Certificate

active

06984856

ABSTRACT:
An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

REFERENCES:
patent: 4224520 (1980-09-01), Greene et al.
patent: 5554849 (1996-09-01), Gates
patent: 5858902 (1999-01-01), Ishikawa et al.
patent: 6031231 (2000-02-01), Kimata et al.
patent: 6635495 (2003-10-01), Hashimoto et al.
patent: 07-146187 (1995-06-01), None
patent: 09-268061 (1997-10-01), None
patent: 2000-055737 (2000-02-01), None
patent: 2000-097765 (2000-04-01), None
patent: 2000-111397 (2000-04-01), None
J. B. Torrance, et al., “Systematic Study of Insulator-Metal Transitions in Perovskites RNiO3(R=Pr, Nd, Sm, Eu) Due to Closing of Charge-Transfer Gap”, Physical Review B, vol. 45, No. 14, Apr. 1, 1992-II, pp. 8209-8212.
C. S. Alexander, et al., “Destruction of the Mott Insulating Ground State of Ca2RuO4by a Structural Transition”, Physical Review B, vol. 60, No. 12, Sep. 15, 1999-II, pp. R8422-R8425.
G. Cao, et al., “Ground-State Instability of the Mott Insulator Ca2RuO4: Impact of Slight La Doping on the Metal-Insulator Transition and Magnetic Ordering”, Physical Review B, Condensed Matter and Materials Physics, Third Series, vol. 61, No. 8, Feb. 15, 2000-II, pp. R5053-5057.
G. Catalan, et al., “Transport Properties of NdNiO3Thin Films Made by Pulsed-Laser Deposition”, Journal of Applied Physics, vol. 87, No. 1, Jan. 1, 2000, pp. 606-608.
M. A. Novojilov, et al., “Perovskite Rare-Earth Nickelates in the Thin-Film Epitaxial State”, Applied Physics Letters, vol. 76, No. 15, Apr. 10, 2000, pp. 2041-2043.
R. A. McKee, et al., “Crystalline Oxides on Silicon: The First Five Monolayers”, Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998, pp. 3014-3017.
I. Mizushima, et al., “Empty-Space-in-Silicon Technique for Fabricating a Silicon-on-Nothing Structure”, Applied Physics Letters, vol. 77, No. 20, Nov. 13, 2000, pp. 3290-3292.

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