Infrared optical bulk channel field effect transistor for greate

Details Infrared optical bulk channel field effect transistor for greate Infrared optical bulk channel field effect transistor for greate

1996-12-10

1998-11-17

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257462, 257294, 438 57, 438 69, 438 3, H01L 2904, H01L 2978

Patent

active

058380345

ABSTRACT:
An infrared optical field effect transistor has been developed using a thin film of Lead Titanate (PbTiO.sub.3) deposited on a n/p.sup.+ Si substrate by RF magnetron sputtering. This transistor possesses excellent pyroelectric properties and can, therefore, be operated even at room temperature. The infrared optical field effect transistor has the following features associated with rapid bulk channel structure and higher mobility:

REFERENCES:
patent: 4074302 (1978-02-01), Brewer
patent: 4245230 (1981-01-01), Kwok et al.
patent: 4598305 (1986-07-01), Chiang et al.
patent: 4814844 (1989-03-01), Bluzer
patent: 4865427 (1989-09-01), Kingston et al.
patent: 5189593 (1993-02-01), Ooi
patent: 5248564 (1993-09-01), Ramesh
patent: 5331187 (1994-07-01), Ogawa
patent: 5418389 (1995-05-01), Watanabe
patent: 5449935 (1995-09-01), Nakamura
patent: 5502488 (1996-03-01), Nagasaki et al.
patent: 5515311 (1996-05-01), Mihara
patent: 5548475 (1996-08-01), Ushikubo et al.
patent: 5567979 (1996-10-01), Nashimoto et al.
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5623439 (1997-04-01), Gotoh et al.
Chen, et al., An infrared optical field transistor with high speed response, Appl. Phys. Lett. 68(3), pp. 1-2, Jan. 1996.
"Matsushita Uses PbTiO.sub.3 Thin Film for High Response Speed Pyroelectric IR Imager." Nikkei Electronics Asia, pp. 36-37, Jan. 1993.

Affiliated with

Also associated with

Rating

Infrared optical bulk channel field effect transistor for greate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Infrared optical bulk channel field effect transistor for greate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared optical bulk channel field effect transistor for greate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886924