Infrared imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257442, 257461, 257188, H01L 3300, H01L 2978

Patent

active

054101689

ABSTRACT:
An infrared imaging device includes a first conductivity type first semiconductor layer having a small energy band gap, a first conductivity type second semiconductor layer have a larger energy band gap and disposed on the first semiconductor layer, a light receiving region of the second conductivity type in the second semiconductor layer and extending into the first semiconductor layer, a second conductivity type region in the second semiconductor layer spaced from the light receiving region, an insulating layer on the second semiconductor layer, and an MIS electrode on the insulating layer between the light receiving region and the second conductivity type region. Recombination of signal charges produced by incident light in the light receiving region and leakage current at the surface of the second semiconductor layer at the light receiving region are reduced. In addition, the numerical aperture of the light receiving region is increased. As a result, a highly reliable monolithic infrared imaging device in which photosensitivity and signal process efficiency are significantly improved is realized.

REFERENCES:
patent: 4206003 (1980-06-01), Koehler
patent: 4433343 (1984-02-01), Levine
patent: 4549195 (1985-10-01), Bluzer
patent: 4725559 (1988-02-01), Fraes
patent: 4791467 (1988-12-01), Amingual et al.
patent: 4859851 (1989-08-01), Wotherspoon

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