Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-01-16
2007-01-16
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S962000, C438S022000, C257SE21002
Reexamination Certificate
active
10925437
ABSTRACT:
The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOxlayer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.
REFERENCES:
patent: 5354707 (1994-10-01), Chapple-Sokol et al.
patent: 5789267 (1998-08-01), Hsia et al.
patent: 6323142 (2001-11-01), Yamazaki et al.
patent: 2004/0106285 (2004-06-01), Zacharias
patent: 0899796 (1999-03-01), None
patent: WO 2004066346 (2004-08-01), None
L.T. Canham, Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers, Appl. Phys. Lett., 57, 1046 (1990).
Mykola Sopinskyy and Viktoriya Khomchenko, Electroluminescence in SiOx Films and SiOx-film-based Systems, Current Opinion in Solid State and Material Science, 7 (2003) 97-109.
Lan Shan Ming
Yang Tsun Neng
Atomic Energy Council-Institute of Nuclear Energy Research
Egbert Law Offices
Novacek Christy
Smith Zandra V.
LandOfFree
Infra-red light-emitting device and method for preparing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Infra-red light-emitting device and method for preparing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infra-red light-emitting device and method for preparing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3721014