Information storage devices using magnetic domain wall...

Static information storage and retrieval – Magnetic shift registers – Bidirectional

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S148000, C365S158000, C365S171000, C365S173000, C365S222000, C977S933000, C977S935000

Reexamination Certificate

active

08054666

ABSTRACT:
In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.

REFERENCES:
patent: 5815342 (1998-09-01), Akiyama et al.
patent: 5870328 (1999-02-01), Mohri
patent: 6566872 (2003-05-01), Sugitani
patent: 6713195 (2004-03-01), Wang et al.
patent: 6834005 (2004-12-01), Parkin
patent: 6864042 (2005-03-01), Kuo et al.
patent: 6920062 (2005-07-01), Parkin
patent: 7031178 (2006-04-01), Parkin
patent: 7236386 (2007-06-01), Parkin
patent: 7586781 (2009-09-01), Saitoh et al.
patent: 2004/0134565 (2004-07-01), Sun et al.
patent: 2004/0251232 (2004-12-01), Chen et al.
patent: 2004/0252538 (2004-12-01), Parkin
patent: 2004/0252539 (2004-12-01), Parkin
patent: 2005/0041463 (2005-02-01), Drewes
patent: 2005/0078509 (2005-04-01), Parkin
patent: 2005/0078511 (2005-04-01), Parkin
patent: 2005/0174876 (2005-08-01), Katoh
patent: 2005/0220990 (2005-10-01), Aoyama et al.
patent: 2006/0024529 (2006-02-01), Murakam
patent: 2006/0104110 (2006-05-01), Sun et al.
patent: 2006/0120132 (2006-06-01), Parkin
patent: 2006/0237808 (2006-10-01), Saito
patent: 2007/0254188 (2007-11-01), Hayakawa et al.
patent: 2008/0075978 (2008-03-01), Weller et al.
patent: 2008/0130355 (2008-06-01), Saitoh et al.
patent: 1 497 653 (1978-01-01), None
patent: WO 2004/077451 (2004-09-01), None
Chinese Office Action dated Nov. 27, 2009 and English translation thereof.
European Search Report (dated Feb. 26, 2008) for counterpart European Patent Application No. 07123052.8-1233 is provided for the purposes of certification under 37 C.F.R. §§ 1.97(e) and 1.704(d).
Fassbender, J. et al., “Magnetic patterning by means of ion irradiation and implantation,” Journal of Magnetism and Magnetic Materials, Elsevier Science Publishers, Amsterdam, NL, vol. 320, No. 3-4, Oct. 25, 2007, pp. 579-596.
Fassbender, J., et al., “Topical Review; Tailoring magnetism by light-ion irradiation; Topical Review” Journal of Physics D. Applied Physics, Institute of Physics Publishing, Bristol, GB, vol. 37, No. 16, Aug. 21, 2004, pp. R179-R196.
Owen, N. et al., “Patterning Magnetic Antidot-Type Arrays by Ga+Implantation,” IEEE Transactions on Magnetics, IEEE Service Center, New York, NY, vol. 38, No. 5, Sep. 2002, pp. 2553-2555.
Terris, B., et al., “Topical Review; Nanofabricated and self-assembled magnetic structures as data storage media; Topical Review” Journal of Physics D. Applied Physics, Institute of Physics Publishing, Bristol, GB, vol. 38, No. 12, Jun. 21, 2005, pp. R199-R222.
Chinese Office Action dated Sep. 8, 2010 and English translation thereof.
U.S. Office Action for U.S. Appl. No. 11/980,353 dated Apr. 14, 2010.
Notice of Allowance for U.S. Appl. No. 11/980,353 dated Oct. 15, 2010.
U.S. Office Action for U.S. Appl. No. 11/980,455 dated Jun. 24, 2010.
U.S. Office Action for U.S. Appl. No. 11/980,425 dated Mar. 30, 2010.
U.S. Office Action for U.S. Appl. No. 11/980,425 dated Sep. 30, 2009.
U.S. Office Action for U.S. Appl. No. 11/980,425 dated Aug. 5, 2010.
Notice of Allowance for U.S. Appl. No. 11/980,627 dated Aug. 19, 2010.
Office Action dated Jan. 19, 2011 in co-pending U.S. Appl. No. 11/980,425.
Notice of Allowance dated Jan. 25, 2011 in co-pending U.S. Appl. No. 11/980,455.
Notice of Allowance dated Jan. 25, 2011 in co-pending U.S. Appl. No. 11/980,353.
Second Office Action by the Chinese Patent Office dated Jun. 2, 2011 for Chinese Application No. 200710159774.9 with English translation.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Information storage devices using magnetic domain wall... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Information storage devices using magnetic domain wall..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Information storage devices using magnetic domain wall... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4278536

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.