Infinitely stackable interconnect device and method

Details Infinitely stackable interconnect device and method Infinitely stackable interconnect device and method

2011-03-01

2011-03-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S712000, C257SE21170, C257SE21218, C257SE21245, C257SE21278, C257SE21324, C257SE21499

Reexamination Certificate

active

07897503

ABSTRACT:
A device having the capability for electrical, thermal, optical, and fluidic interconnections to various layers. Through-substrate vias in the interconnect device are filled to enable electrical and thermal connection or optionally hermetically sealed relative to other surfaces to enable fluidic or optical connection. Optionally, optical components may be placed within the via region in order to manipulate optical signals. Redistribution of electrical interconnection is accomplished on both top and bottom surfaces of the substrate of the interconnect chip.

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