Inductively coupled plasma reactor with top electrode for enhanc

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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20429831, 20429834, 20429838, 118723I, 118723IR, 118723E, H01L 2100, C23C 1434

Patent

active

056859414

ABSTRACT:
A plasma reactor for carrying out plasma processing of a semiconductor substrate includes a vacuum chamber including apparatus for introducing a gas into the interior thereof, an induction coil encircling a region of the vacuum chamber, the coil being connected across an RF power source, and an electrode positioned adjacent the region and connected to the RF power source for capacitively coupling RF power to the gas in the interior of the vacuum chamber. The electrode has a surface area facing the region which is large enough to provide capacitive coupling of RF power to the gas in the region sufficient to facilitate igniting a plasma, but which is small enough so that, during steady-state maintenance of the plasma, most of the RF power coupled to the plasma from the RF power source is coupled inductively rather than capacitively.

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patent: 5252178 (1993-10-01), Moslehi
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5449432 (1995-09-01), Hanawa
patent: 5460707 (1995-10-01), Wellerdieck

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