Inductively coupled plasma reactor and process

Details Inductively coupled plasma reactor and process Inductively coupled plasma reactor and process

1996-02-22

1997-11-04

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118723I, 118723IR, 427569, H05H 100

Patent

active

056835485

ABSTRACT:
An inductively coupled plasma reactor and method for processing a semiconductor wafer (28). The inductively coupled plasma reactor (10) includes a plasma source (16) having a plurality of channels (38, 44) in which processing gases are independently supplied to each channel. A gas supply system (20) includes a plurality of gas feed lines (34, 35, 36) each capable of supplying an individual flow rate and gas composition to the plurality of channels (38, 44) in the plasma source (16). Each channel is surrounded by an independently powered RF coil (54, 56), such that the plasma density can be varied within each channel (38, 44) of the plasma source (16). In operation, a material layer (66) overlying a semiconductor wafer (28) is either uniformly etched or deposited by localized spatial control of the plasma characteristics at each location (64) across the semiconductor wafer (28).

REFERENCES:
patent: 4525382 (1985-06-01), Sugioka
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5269847 (1993-12-01), Anderson et al.
patent: 5356515 (1994-10-01), Tahara et al.
Yasui, Toshiaki et al., "Electron cyclotron resonance plasma generation using a planar ring-cusp magnetic field and a reetrant coaxial cavity," Jul./Aug. 1995, pp. 2105-2109.
Francombe, Maurice H. et al., "Physics of Thin Films," vol. 18, 1994, pp. 1-59.
Yamada, N. et al., "Simulations of Schemes for Feedback and Optimal Control of Etch Rate and Uniformity in Inductively Coupled Plasma Sources," Oct. 1995, 48 pages.
Ventzek, P. L. G. et al., "Simulations of Real-Time Two-Coil Control of an Inductively Coupled Plasma Source For Etching Applications," Abstract No. 121, pp. 187-188.

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