Inductively coupled plasma chemical vapor deposition apparatus

Details Inductively coupled plasma chemical vapor deposition apparatus Inductively coupled plasma chemical vapor deposition apparatus

1997-03-18

1999-09-14

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, 198723I, C23C 1600

Patent

active

059517735

ABSTRACT:
Disclosed is an inductively coupled plasma chemical vapor deposition apparatus including: a vacuum reaction chamber having an interior, bounded in part by a dielectric shield, the dielectric shield being lined with an oxygen-less silicon layer formed on its interior surface; a gas introducing unit for introducing a reactant gas to the interior of the vacuum reaction chamber; an antenna where radio frequency power is applied, the antenna being arranged outside the vacuum reaction chamber and adjacent to the dielectric shield; a coupling unit for coupling a radio frequency power source to the antenna; a stage for heating a work piece to be processed within the interior of the vacuum reaction chamber; and an exhaust unit for exhausting remnant gases from the interior of the vacuum reaction chamber. The oxygen-less silicon layer can be either an amorphous silicon layer, silicon nitride layer or silicon carbide layer.

REFERENCES:
patent: 4419332 (1983-12-01), von der Ropp
patent: 5498292 (1996-03-01), Ozaki
patent: 5525159 (1996-06-01), Hama et al.
"Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasmas", H. Sugai et al, Jpn. Journal of Appl. Phys., vol. 23 (1994), pp. 2189-2193. Part 1, No. 4B, Apr. 1994.
"High Rate and Highly Selective SiO.sub.2 Etching Employing Inductively Coupled Plasma and Discussion on Reaction Kinetics", Y. Horike et al, Journal Vac. Sci. Technol. A 13(3) May/Jun. 1995, pp. 801-809.
"Characterization at Different Aspect Ratios (Radius/Length) of a Radio Frequency Inductively Coupled Plasma Source", P. Wainman et al, Journal Vac. Sci. Technol., A 13(5), Sep./Oct. 1995, pp. 2464-2469.
Deposition of Hydrogenated Amorphous Silicon by an Inductively Coupled Glow Discharge Reactor with Shield Electrodes, K. Yokota et al, Journal of Applied Physics, vol. 72, No. 3, Aug. 1, 1992, pp. 1188-1190.
Structural Properties of Polycrystalline Silicon Films Prepared at Low Temperatures by Plasma Chemical Vapor Deposition, H, Kakinuma et al, J. Appl. Phys., vol. 70, No. 12, Dec. 15, 1991, pp. 7374-7381.

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