Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1997-09-20
2000-10-17
Raimund, Christopher
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
20419232, 20419237, 20429831, 20429834, C23C 1648, C23F 102, C23F 108
Patent
active
061325511
ABSTRACT:
The invention is embodied in an inductively coupled plasma reactor having a conductive enclosure defining a reactor chamber interior, the enclosure including a conductive layer, and an inductive antenna external of the reactor chamber interior and facing the interior through the conductive layer and being connectable to an RF power source, the conductive layer being sufficiently thin to permit an inductive field of the inductive antenna to coupled through the conductive layer into the reactor chamber interior. A wafer pedestal for supporting a semiconductive workpiece within the reactor chamber interior is connected to an RF bias power supply whereby a workpiece on the wafer support is a bias power electrode and the conductive layer is a bias power counter electrode, so that the entire reactor enclosure is a bias power counter electrode. Preferably, the bias power electrode is biased with respect to RF ground, and the conductive reactor enclosure including the conductive layer is grounded.
REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4261762 (1981-04-01), King
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4371412 (1983-02-01), Nishizawa
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4427762 (1984-01-01), Takahashi et al.
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4457359 (1984-07-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4579080 (1986-04-01), Martin et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4755345 (1988-07-01), Baity, Jr. et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4786359 (1988-11-01), Stark et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 4807016 (1989-02-01), Douglas
patent: 4810935 (1989-03-01), Boswell
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4870245 (1989-09-01), Price et al.
patent: 4918031 (1989-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4948750 (1990-08-01), Kausche et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5000220 (1991-03-01), Wang et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5085727 (1992-02-01), Steger
patent: 5169487 (1992-12-01), Langley et al.
patent: 5173412 (1992-12-01), Kiener et al.
patent: 5187454 (1993-02-01), Collins et al.
patent: 5203956 (1993-04-01), Hansen
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5249251 (1993-09-01), Egalon et al.
patent: 5258824 (1993-11-01), Carlson et al.
patent: 5276693 (1994-01-01), Long et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5326404 (1994-07-01), Sato
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5349313 (1994-09-01), Collins et al.
patent: 5392018 (1995-02-01), Collins et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5414246 (1995-05-01), Shapona
patent: 5421891 (1995-06-01), Campbell et al.
patent: 5423945 (1995-06-01), Marks et al.
patent: 5468341 (1995-11-01), Samukawa
patent: 5477975 (1995-12-01), Rice et al.
patent: 5514246 (1996-05-01), Blalock
patent: 5529657 (1996-06-01), Ishii
patent: 5540800 (1996-07-01), Qian
patent: 5556501 (1996-09-01), Collins et al.
Coburn, W.J., "Increasing the Etch Rate Ratio oSiO2/Si in Fluorocarbon Plasma Etching," IBM Technical Disclosure, vol. 19, No. 10, Mar. 1977.
Matsu, Seitaro, "Selective Etching of Si02 Relative to Si by Plasma Reactive Sputter Etching," J. Vac. Sc. Technology, vol. 17, No. 2, Mar.-Apr. 1980.
Lee, Ho-Jun, Yang, Dong-II and Whang, Ki-Woong, "The effects of magnetic fields on a planar inductively coupled argon plasma," Plasma Sources Sci. Technol., 5(1996), pp. 383-388.
Sugai, H. and Nakamura, K., "Diagnostics and Control of radicals in an inductively coupled etching reactor," J. Vac. Sci. Technol., A 13(3), May/Jun. 1995, pp. 887-893.
Horiike, Yashuiro, Kazuhiro, Shindo, Haruo and Kukasawa, Takayuki, "High rate and highly selective Si02 etching employing inductively coupled plasma and discussion on reaction kinetics," J. Vac. Sci. Technol., May/Jun. 1995, pp. 801-809.
Lieberman, M.A. and Ashida, S., "Global models of pulse-power-modulated high-density, low pressure discharges," Plasma Sources Sci. Technol., 5(1996), pp. 145-158.
Samakawa, Seiji and Ohtake, Hiroto, "Pulse-time Modulated Plasma Etching for Precise ULSI Patterning," Abstract No. 162, Microelectronics Research Laboratories, NEC Corporation, Japan, May 1996, pp. 217-218.
Shibano, Teruo, Fujiwara, Nobuo, Hirayama, Makoto, Nagata, Hitoshi and Demizo, Kiyoshi, "Etching yields of Si02 by low energy CF+x and Fx ions," Appl. Phys. Lett., vol. 63, No. 17, Oct. 25, 1993.
Tynan, G.R., Bailey, A.D. III, Campbell, G.A., Charatan, R., de Chambrier, A., Gibson, G., "Characterization of an Azimuthally Symmetric helicon Wave High Density Plasma," Trikon Technologies, Inc., Japan, Jul. 1997.
European Patent Office Communication Pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-22-8, mailed Jan. 1996.
Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd).
Patent Abstracts of Japan, Publication No.06196446 A, Jul. 15, 1994 (NEC Corp).
Patent Abstracts of Japan, Publication No. 07288196 A, Oct. 31, 1995 (Tokyo Electron Ltd).
Patent Abstracts of Japan, Publication No. 08017799 A, Jan. 19, 1996 (Plasma Syst:KK).
Patent Abstracts of Japan, Publication No. 62052714 A, Mar. 7, 1987 (Olympus Optical Co. Ltd; Toagosei Chem Ind Co Ltd).
Horioka Keiji
Okano Haruo
Applied Materials Inc.
Raimund Christopher
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