Inducing strain in the channels of metal gate transistors

Details Inducing strain in the channels of metal gate transistors Inducing strain in the channels of metal gate transistors

2011-03-08

2011-03-08

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S199000, C438S275000, C257S369000, C257SE21638

Reexamination Certificate

active

07902058

ABSTRACT:
In a metal gate replacement process, strain may be selectively induced in the channels of NMOS and PMOS transistors. For example, a material having a higher coefficient of thermal expansion than the substrate may be used to form the gate electrodes of PMOS transistors. A material with a lower coefficient of thermal expansion than that of the substrate may be used to form the gate electrodes of NMOS transistors.

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