Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2005-02-22
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06858897
ABSTRACT:
An individual-well adaptive method of body bias control that mitigates the effects of D2D and WD process variations is shown. It is assumed that p-type transistors are grouped in sections. The bodies of all the p-type transistors within a section are connected to a single n-well. This section size can be small enough to provide fine-granular adjustments to the circuit without having any impact on area overhead. With a small amount of additional circuitry and routing, individual well biases can be intelligently adjusted resulting in closely controlled chip power and performance. Experimental results show that binning yields as low as 17% can be improved to greater than 90% using the proposed method.
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Abraham Fetsum
Gehman Leslie P.
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