Individual bit line recovery circuits

Details Individual bit line recovery circuits Individual bit line recovery circuits

1990-06-06

1991-10-15

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

For complementary information

36518906, 36518911, 365203, G11C 1300

Patent

active

050580671

ABSTRACT:
A bipolar recovery circuit for a static random access memory cell is described. The circuit corrects reverse emitter-base breakdown which occurs in the known common base node writing recovery circuits. The circuit is simple, requiring little silicon chip area to fabricate. In a preferred embodiment, a separate recovery circuit is coupled to each of the true output line and the complement output line of the memory cell.

REFERENCES:
patent: 4984204 (1991-01-01), Sato et al.

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