Independently variably controlled pulsed R.F. plasma chemical va

Details Independently variably controlled pulsed R.F. plasma chemical va Independently variably controlled pulsed R.F. plasma chemical va

1982-12-15

1985-02-19

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 118723, 118698, 156643, 156345, 156662, C23C 1308, H01L 21306

Patent

active

045005630

ABSTRACT:
Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F. power pulses. The pulse repetition rate, pulse length and peak power level of the individual pulses are independently variably controlled to variably control the uniformity of the processing of the semiconductive wafers within the processing gaps.

REFERENCES:
patent: 3677799 (1972-07-01), Hou
patent: 4223048 (1980-09-01), Engle, Jr.
patent: 4263088 (1981-04-01), Gorin
patent: 4401507 (1983-08-01), Engle

Affiliated with

Also associated with

Rating

Independently variably controlled pulsed R.F. plasma chemical va does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Independently variably controlled pulsed R.F. plasma chemical va, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Independently variably controlled pulsed R.F. plasma chemical va will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-613088