Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2007-02-27
2007-02-27
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S591000
Reexamination Certificate
active
10054438
ABSTRACT:
In one embodiment a precursor gas for growing a polycrystalline silicon-germanium region and a single crystal silicon-germanium region is supplied. The precursor gas can be, for example, GeH4. The polycrystalline silicon-germanium region can be, for example, a base contact in a heterojunction bipolar transistor while the single crystal silicon-germanium region can be, for example, a base in the heterojunction bipolar transistor. The polycrystalline silicon-germanium region can be grown in a mass controlled mode at a certain temperature and a certain pressure of the precursor gas while the single crystal silicon-germanium region can be grown, concurrently, in a kinetically controlled mode at the same temperature and the same pressure of the precursor gas. The disclosed embodiments result in controlling the growth of the polycrystalline silicon-germanium independent of the growth of the single crystal silicon-germanium.
REFERENCES:
patent: 5006912 (1991-04-01), Smith et al.
patent: 5321302 (1994-06-01), Shimawaki
patent: 5323032 (1994-06-01), Sato et al.
patent: 5440152 (1995-08-01), Yamazaki
patent: 5569611 (1996-10-01), Imai
patent: 5633179 (1997-05-01), Kamins et al.
patent: 5811871 (1998-09-01), Nakashima
patent: 5930635 (1999-07-01), Bashir et al.
patent: 6365479 (2002-04-01), U'Ren
patent: 6410975 (2002-06-01), Racanelli
patent: 6475849 (2002-11-01), Racanelli
patent: 6559022 (2003-05-01), U'Ren
patent: 6583494 (2003-06-01), Racanelli
patent: 2002/0058348 (2002-05-01), Lee
patent: 2002/0090788 (2002-07-01), U'ren
patent: 2002/0117733 (2002-08-01), Racanelli
patent: 2002/0117734 (2002-08-01), Racanelli
Farjami & Farjami LLP
Newport Fab LLC
Pham Long
LandOfFree
Independent control of polycrystalline silicon-germanium in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Independent control of polycrystalline silicon-germanium in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Independent control of polycrystalline silicon-germanium in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3872775