Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1997-08-14
2000-01-18
Dutton, Brian
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
324765, H01L 2166, G01R 3126
Patent
active
060157186
ABSTRACT:
The invention enables the identification of particles in a chamber in which a substrate is processed (e.g., a semiconductor process chamber). Such identification can be accomplished by placing a test substrate [(i.e., a substrate that is examined to detect and identify particles present on the substrate)] in the process chamber and inspecting the test substrate, where the composition of the test substrate is chosen so as to enable identification of particles having a composition that includes one or more of a predefined set of elements. For example, the composition of the test substrate can be chosen so that each of the elements that substantially comprise the composition of the test substrate are different than each of the elements that substantially comprise the composition or compositions of a process substrate or substrates [(i.e., a substrate that has been processed in the chamber during the normal course of operation of the chamber)], thus enabling the identification of the presence in a particle of an element that is part of the composition of a process substrate. The invention can be used generally to identify the composition of particles in any type of process chamber used to process any type of substrate; however, the invention can be particularly advantageously used to identify the composition of particles present in a semiconductor process chamber and, in particular, such chamber that is used to process substrates made of silicon. In such case, the test substrate can have a composition that includes substantially no silicon. A test substrate for use with the invention can be made of, for example, Teflon.TM., gallium arsenide, ruby or some combination of those materials.
REFERENCES:
patent: 4411729 (1983-10-01), Komeno
Cypress Semiconductor Corporation
Dutton Brian
Graham David R.
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