Increasing the read signal in ferroelectric memories

Details Increasing the read signal in ferroelectric memories Increasing the read signal in ferroelectric memories

2005-12-06

2005-12-06

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06972983

ABSTRACT:
Improved sensing of ferroelectric memory cells is disclosed. When a memory access is initiated, the bitlines are precharged to a negative voltage, for example, −0.5 to −1.0V. This increases the effective plateline pulse (VPLH) to VPLH+the magnitude of the negative voltage. This results in an increase in the difference between VHIand VL0read signals, thereby increasing the sensing window.

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