Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With stress relief
Patent
1997-10-06
1999-12-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With stress relief
257666, 257783, 257674, 257667, H01L 23495, H01L 2348, H01L 2352
Patent
active
060052864
ABSTRACT:
Apparatus and method of increasing the distance of the gap between a lead frame and a semiconductor die surface in a package assembly. An adhesive layer and a gap increasing layer are disposed between the lead frame and the semiconductor die surface. The gap increasing layer has a thickness selected to reduce likelihood of package particles from being trapped between the lead frame and the die surface. The gap increasing layer includes silver plating, and has a thickness of at least about 300 to 500 microinches.
REFERENCES:
patent: 4984059 (1991-01-01), Kubota et al.
patent: 5260234 (1993-11-01), Long
patent: 5311057 (1994-05-01), McShane
patent: 5436410 (1995-07-01), Jain et al.
patent: 5585600 (1996-12-01), Froebel et al.
patent: 5677566 (1997-10-01), King et al.
patent: 5714405 (1998-02-01), Tsubosaki et al.
patent: 5789803 (1998-08-01), Kinsman
patent: 5804874 (1998-09-01), An et al.
patent: 5817540 (1998-10-01), Wark
patent: 5834830 (1998-11-01), Cho
patent: 5923081 (1999-07-01), Tandy
US application No. 08/614,618, Kinsman et al., filed Mar.13, 1996.
Clark Jhihan B.
Micro)n Technology, Inc.
Saadat Mahshid
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