Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-07-13
2009-06-30
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C257SE21008
Reexamination Certificate
active
07553736
ABSTRACT:
A method for increasing capacitances of capacitors and the resulting integrated structure are provided. The method includes providing a substrate, forming a low-k dielectric layer over the substrate wherein the low-k dielectric layer includes a capacitor region and a non-capacitor region, forming a capacitor in the capacitor region, forming a masking layer which masks the non-capacitor region while leaving the capacitor region exposed, performing a local treatment to increase a k value of the low-k dielectric layer in the capacitor region, and removing the masking layer.
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Chen Hsien-Wei
Chen Hsueh-Chung
Tsai Hao-Yi
Ghyka Alexander G
Patel Reema
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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