Increased magnetic damping for toggle MRAM

Details Increased magnetic damping for toggle MRAM Increased magnetic damping for toggle MRAM

2011-04-05

2011-04-05

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000, C365S209000, C365S225500, C365S243500

Reexamination Certificate

active

07920416

ABSTRACT:
Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from the fixed magnetic layer by at least one barrier layer; at least one second free magnetic layer separated from the first free magnetic layer by at least one spacer layer; and at least one capping layer over a side of the second free magnetic layer opposite the spacer layer. One or more of the first free magnetic layer and the second free magnetic layer comprise at least one rare earth element, such that the at least one rare earth element makes up between about one percent and about 10 percent of one or more of the first free magnetic layer and the second free magnetic layer.

REFERENCES:
patent: 6967863 (2005-11-01), Huai
patent: 2005/0184839 (2005-08-01), Nguyen et al.
patent: 2006/0291108 (2006-12-01), Sbiaa et al.
Bailey et al., “Control of Magnetization Dynamics in Ni81Fe19 Thin Films Through the Use of Rare-Earth Dopants,” IEEE Transactions on Magnetics, vol. 37. No. 4; pp. 1749-1754 (Jul. 2001).

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