Increased light extraction from a nitride LED

Details Increased light extraction from a nitride LED Increased light extraction from a nitride LED

2006-10-24

2006-10-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S026000, C438S027000, C438S033000, C438S034000, C438S035000, C438S038000, C438S041000, C257SE33057

Reexamination Certificate

active

07125734

ABSTRACT:
In a method for fabricating a flip-chip light emitting diode device, a submount wafer is populated with a plurality of the light emitting diode dies. Each device die is flip-chip bonded to the submount. Subsequent to the flip-chip bonding, a growth substrate is removed. The entire submount is immersed in the etchant solution, exposed to the light for a prespecified period of time, removed from the solution, dried and diced into a plurality of LEDs. The LEDs are immediately packaged without any further processing.

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