Increase dram node capacitance by etching rough surface

Details Increase dram node capacitance by etching rough surface Increase dram node capacitance by etching rough surface

1996-09-13

1998-05-19

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430319, 430330, 430396, G03F 700

Patent

active

057534195

ABSTRACT:
A capacitor and method of forming the capacitor for high density applications. The capacitor (100) comprises a storage node (106) having waves (108) formed on the vertical surfaces thereof. The waves (108) are created using a silylated photoresist. The conditions of silylation and subsequent etch are such that, when etched, the silylated photoresist has waves on the vertical edges thereof. During the etch to form the storage node (106), the waves are transferred to the storage node (106). Waves (108) increase the surface area of the storage node (106) and thus the resulting capacitance.

REFERENCES:
patent: 5411911 (1995-05-01), Ikeda
patent: 5562801 (1996-10-01), Nulty

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