Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Reexamination Certificate
2007-06-08
2010-06-01
Fourson, George (Department: 2823)
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
C257SE21603, C257SE21054, C438S198000, C438S285000, C438S931000
Reexamination Certificate
active
07727340
ABSTRACT:
In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.
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Li, H.F., et al, “Electrical Characteristics of NO Nitrided SiO2 Grown on p-type 4H-SiC,” Proc. 21st Intl. Conf. on Microelectronics Yugoslavia, (MIEL '97). 1997, pp. 611-612.
Dimitrijev, S. et al, “Nitridation of Silicon-Dioxide Films Grows on 6H Silicon Carbide,” IEEE Electron Device Letters, vol. 18, No. 5, May 1977, pp. 175-177.
Williams, J.R. et al, “Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide”, Materials Science Forum, vol. 389-393 (2002), pp. 967-972.
Chung, G.Y., et al, “Effect of Nitric Oxide Annealing on the Interface Trap . . . Silicon Carbide”, App. Phys. Lett., vol. 76, No. 13, pp. 1713-1715.
Li, H.F., et al, “Electrical Characteristics of NO Nitrided SiO2 Grown on p-type 4H-SiC”, Proc. 21stIntl. Conf. on Microelectronics (MIEL '97) Yugoslavia, Sep. 14-1, 1997, pp. 611-612.
Jarnet, P., et al, “Physical Properties of N2O and NO-Nitrided Gate Oxides Grown on 4H-SiC”, Appl. Phys. Lett. vol. 79, No. 3, Jul. 16, 2001, pp. 323-325.
Li, Hui-feng, et al, “Interffacial Characteristics of N2O and NO Nitrided SiO2 Grown on SiC by Rapid Thermal Processing”, Appl. Phys. Lett, 70(15) Apr. 14, 1997.
Lu, Chao-Yang, et al., “Effect of Process Variations and Ambient Temperature on Electron Mobility at the SiO2/4HSi-C Interface”, IEEE Transactions on Electron Devices, vol. 50, No. 7, Jul. 2003, pp. 1582-1588.
Li, H., Dimitrijev, S., Harrison, H.B., Improved Realiability of NO-nitrided SiO2 grown on p-type 4H-SiC, Aug. 1998, IEEE Electron Device Letters, vol. 19, Issue 8, p. 279-281.
Lai, P.T., Chakraborty, S., Chan, C.L., Cheng, Y.C., “Effects of nitridation and annealing on interface properties of thermaly oxidized SiO2/SiC metal-oxide-semiconductor system”, Jun. 19, 2000, Applied Physics Letters, vol. 76, No. 25, p. 3744-3746.
Lipkin, L.A., Palmour, J.W., “Insulator Investigation on SiC for Improved Reliability”, Mar. 1999, IEEE Transactions on Electron Devices, vol. 46, No. 3, p. 525-532.
Afanas'ev, V.V., “Electronic properties of SiO2/SiC interfaces”, 1999, Microelectronic Engineering, vol. 48, p. 241-248.
Li, Hui-Feng, et al, “Analysis of Fowler-Nordheim Injection in NO Nitrided Gate Oxide Grown on n-type 4H-SiC”, Proc. 22ndInt'l Conf. on Microelectronics (MIEL 2000) vol. 1, Nis Serbia, May 14-17, 2000, pp. 331-333.
Chung, G.Y., et al, “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide”, IEEE Electron Device Letters, vol. 22, No. 4, Apr. 2001, pp. 176-178.
Li, Hui-Feng, “Distribution and Chemical Bonding of N at NO Nitrided SiC/SiO2 Interface”, IEEE 1999 pp. 164-166.
Dimitrijev, S. et al., “Nitridation of Sillicon-Dioxide Films Grown on 6H Silicon Carbide”, IEEE Electron Device Letters, vol. 18, No. 5, May 1977, pp. 175-177.
Jarnet, P., et al, “Physical Properties of N2O and NO-Nitrided Gate Oxides Grown on 4H-SiC,” Appl. Phys. Lett. vol. 79, No. 3, Jul. 16, 2001, pp. 323-325.
Lu, Chao-Yang, et al., “Effect of Process Variations and Ambient Temperature on Electron Mobility at the SiO2/4H Si-C Interface,” IEEE Transactions on Electron Devices, vol. 50, No. 7, Jul. 2003, pp. 1582-1588.
Li, Hui-Feng, et al, “Analysis of Fowler-Nordheim Injection in NO Nitrided Gate Oxide Grown on n-type 4H-SiC,” Proc. 22nd Int'l Conf. on Microelectronics (MIEL 2000) vol. 1, Nis Serbia, May 14-17, 2000, pp. 331-333.
Chung, G.Y., et al., “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide,” IEEE Electron Device Letters, vol. 22, No. 4, Apr. 2001, pp. 176-178.
Williams, J.R. et al, “Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide,” Materials Science Forum, vol. 389-393, 2002, pp. 967-972.
Chung, G.Y., et al, “Effect of Nitric Oxide Annealing on the Interface Trap . . . Silicon Carbide,” App. Phys. Lett., vol. 76, No. 13, pp. 1713-1715.
Lai, P.T., Chakraborty, S., Chan, C.L., Cheng, Y.C., “Effects of nitridation and annealing on interface properties of thermaly oxidized SiO2/SiC metal-oxide-semiconductor system,” Jun. 19, 2000, Applied Physics Letters, vol. 76, No. 25, pp. 3744-3746.
Li, Hui-Feng, et al., “Interffacial Characteristics of N2O and NO Nitrided SiO2 Grown on SiC by Rapid Thermal Processing,” Appl. Phys. Lett, 70(15) Apr. 14, 1997.
Li, Hui-Feng, “Distribution and Chemical Bonding of N at NO Nitrided SiC/SiO2 Interface,” IEEE 1999, pp. 164-166.
Dimitrijev, S. et al, “Nitridation of Sillicon-Dioxide Films Grows on 6H Silicon Carbide,” IEEE Electron Device Letters, vol. 18, No. 5, May 1977, pp. 175-177.
Li, H.F. , et al, “Electrical Characteristics of NO Nitrided SiO2 Grown on p-type 4H-SiC,” Proc. 21st Intl. Conf. on Microelectronics (MIEL '97) Yugoslavia, Sep. 14-1, 1997, pp. 611-612.
Li. H., Dimitrijev, S., Harrison, H.B., Improved Realiability of NO-nitrided SiO2 grown on p-type 4H-SiC, Aug. 1998, IEEE Electron Device Letters, vol. 19, Issue 8, pp. 279-281.
Lipkin, L.A., Palmour, J.W., “Insulator Investigation on SiC for Improved Reliability,” Mar. 1999, IEEE Transactions on Electron Devices, vol. 46, No. 3, pp. 525-532.
Afanas'ev, V.V., “Electronic properties of SiO2/SiC interfaces,” 1999, Microelectronic Engineering, vol. 48, pp. 241-248.
Jarnet, P., et al, “Physical Properties of N2O and NO-Nitrided Gate Oxides Grown on 4H-SiC,” Appl. Phys. Lett. vol. 79, No. 3, Jul. 16, 2001, pp. 323-325.
Li, Hui-Feng, et al., “Interffacial Characteristics of N2O and NO Nitrided SiO2 Grown on SiC by Rapid Thermal Processing,” Appl. Phys. Lett, 70(15) Apr. 14, 1997.
Lu, Chao-Yang, et al., “Effect of Process Variations and Ambient Temperature on Electron Mobility at the SiO2/4H Si-C Interface,” IEEE Transactions on Electron Devices, vol. 50, No. 7, Jul. 2003, pp. 1582-1588.
Li, Hui-Feng, et al, “Analysis of Fowler-Nordheim Injection in NO Nitrided Gate Oxide Grown on n-type 4H-SiC,” Proc. 22nd Int'l Conf. on Microelectronics (MIEL 2000) vol. 1, Nis Serbia, May 14-17, 2000, pp. 331-333.
Chung, G.Y., et al., “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide,” IEEE Electron Device Letters, vol. 22, No. 4, Apr. 2001, pp. 176-178.
Li, Hui-Feng, “Distribution and Chemical Bonding of N at NO Nitrided SiC/SiO2 Interface,” IEEE 1999, pp. 164-165.
Dimitrijev, S. et al, “Nitridation of Silicon-Dioxide Films Grows on 6H Silicon Carbide,” IEEE Electron Device Letters, vol. 18, No. 5, May 1977, pp. 175-177.
Williams, J.R. et al, “Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide,” Materials Science Forum, vol. 389-393, 2002, pp. 967-972.
Chung, G.Y., et al, “Effect of Nitric Oxide Annealing on the Interface Trap . . . Silicon Carbide,” App. Phys. Lett., vol. 76, No. 13, pp. 1713-1715.
Li, H.F., et al, “Electrical Characteristics of NO Nitrided SiO2 Grown on p-type 4H-SiC,” Proc.
Chung Gilyong Y.
De Ventra Massimiliano
Feldman Leonard C.
McDonald Kyle
Pantelides Socrates T.
Auburn University
Fourson George
Morris Manning & Martin LLP
Tingkang Xia Tim
Vanderbilt University
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