Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-09-20
2009-12-22
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S047000, C257SE29033
Reexamination Certificate
active
07635879
ABSTRACT:
This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.
REFERENCES:
patent: 2002/0070390 (2002-06-01), Chow
Magn et al. “inAlAsSb/InGaSb double heterojunction bipolar transistor,” Electronic Letters vol. 41 issue 6 Mar. 17, 2005.
Magno et al. Atimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices, IEEE High Preformance Device Proceedings, p. 288-296, 2002.
Bennett Brian R.
Boos John Bradley
Campbell Paul
Magno Richard
Hunnius Stephen T.
Karasek John
Monbleau Davienne
Reames Matthew
The United States of America as represented by the Secretary of
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