In-situ sequential high density plasma deposition and etch...

Details In-situ sequential high density plasma deposition and etch... In-situ sequential high density plasma deposition and etch...

2007-05-29

2007-05-29

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S694000, C438S706000

Reexamination Certificate

active

10236203

ABSTRACT:
During microelectronic processing of a substrate, a gap on the substrate surface may be filled with a material by alternating deposition and etch processes while the substrate remains in the same process chamber. Alternating deposition and etch processes allows the gap to be completely filled absent a void.

REFERENCES:
patent: 5960300 (1999-09-01), Yabu et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6440864 (2002-08-01), Kropewnicki et al.
patent: 6537421 (2003-03-01), Drewery
patent: 6544380 (2003-04-01), Tomoyasu et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6723653 (2004-04-01), Kim
patent: 2003/0207580 (2003-11-01), Li et al.

Affiliated with

Also associated with

Rating

In-situ sequential high density plasma deposition and etch... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In-situ sequential high density plasma deposition and etch..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ sequential high density plasma deposition and etch... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3809224