In situ plasma clean for tungsten etching back

Details In situ plasma clean for tungsten etching back In situ plasma clean for tungsten etching back

1998-05-26

2000-10-24

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438643, 438648, H01L 214763

Patent

active

061366919

ABSTRACT:
An insulating layer is formed on a semiconductor wafer. A titanium layer (Ti) is formed on the insulating layer. A titanium nitride (TiN) layer is formed on the Ti layer to act as a barrier layer. A tungsten (W) layer is deposited by using chemical vapor deposition. The tungsten layer is etched back to form a tungsten plug. While the wafer is still in the etching chamber, an in situ plans sputtering is performed to remove any fluorine contamination.

REFERENCES:
patent: 5514622 (1996-05-01), Bornstein
patent: 5521119 (1996-05-01), Chen et al.
patent: 5780356 (1998-07-01), Kim

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