In-situ N.sub.2 plasma treatment for PE TEOS oxide deposition

Details In-situ N.sub.2 plasma treatment for PE TEOS oxide deposition In-situ N.sub.2 plasma treatment for PE TEOS oxide deposition

1995-05-25

1997-06-03

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438789, 438763, 438632, H01L 21283, H01L 2131

Patent

active

056354258

ABSTRACT:
A method for avoiding separation between a TEOS layer and the underlying dielectric layer is described, A first dielectric layer is deposited over semiconductor device structures in and on a semiconductor substrate and planarized. A conducting layer is deposited overlying the first dielectric layer and patterned thereby exposing portions of the first dielectric layer, The exposed portions of the first dielectric layer are treated with N.sub.2 plasma, A second dielectric layer is deposited overlying the patterned conducting layer and the exposed portions of the first dielectric layer, The treating of the exposed portions of the first dielectric layer with N.sub.2 plasma improves adhesion between the second dielectric layer and the exposed portions of the first dielectric layer,

REFERENCES:
patent: 4872947 (1989-10-01), Wang et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 5013691 (1991-05-01), Lory et al.
patent: 5219774 (1993-06-01), Vasche
patent: 5334554 (1994-08-01), Lin et al.
patent: 5356722 (1994-10-01), Nguyen et al.
Wolf, S., Silicon Processing, vol. 2, 1990, Lattice Press, pp. 199-204, 224-236.
"Improvement of Gap-Filling Property of O.sub.3 -tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment", Japan Journal of Applied Physics 32 (1993) Pt. 2 No. 1A/B pp. L110-L112.

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