Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Reexamination Certificate
2007-07-23
2010-11-02
Kornakov, Michael (Department: 1714)
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
C134S022180, C134S022190, C134S030000, C134S031000, C134S026000
Reexamination Certificate
active
07824501
ABSTRACT:
Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.
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patent: 6277201 (2001-08-01), Nishikawa
patent: 2006/0216947 (2006-09-01), Choi et al.
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Choi Hoon-sang
Chung Eun-ae
Im Ki-vin
Kang Sang-yeol
Kim Young-sun
Campbell Natasha
Kornakov Michael
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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