In-situ measurement of wafer position on lower electrode

Details In-situ measurement of wafer position on lower electrode In-situ measurement of wafer position on lower electrode

2005-01-18

2005-01-18

Hassanzadeh, Parviz (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S067000, C156S345240

Reexamination Certificate

active

06843926

ABSTRACT:
A method and apparatus for measuring a wafer position on a lower electrode in a plasma etching device are disclosed herein. A wafer is generally placed on a lower electrode in a process chamber of a plasma etching device. Such a wafer (i.e., semiconductor wafer) generally comprises a front side and a back side. A differential pressure gradient between the front side and the back side of the wafer is determined, and thereafter, a position of the wafer on the lower electrode can be measured utilizing the differential pressure gradient.

REFERENCES:
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 6129046 (2000-10-01), Mizuno et al.
patent: 20030026904 (2003-02-01), Yadav et al.
patent: 04219953 (1992-08-01), None

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