In situ hardmask pullback using an in situ plasma resist...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation

Reexamination Certificate

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C438S424000, C438S438000, C438S700000, C438S701000, C438S713000, C257SE21546

Reexamination Certificate

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10689177

ABSTRACT:
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer225and a hardmask layer215located over the substrate205with plasma, trimming the photoresist layer225with a plasma to create an exposed portion215aof the hardmask layer215, removing the exposed portion215awith a plasma to create a trench guide opening227, and creating a trench230through the trench guide opening227with a plasma.

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