Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2008-01-22
2008-01-22
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S424000, C438S438000, C438S700000, C438S701000, C438S713000, C257SE21546
Reexamination Certificate
active
10689177
ABSTRACT:
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer225and a hardmask layer215located over the substrate205with plasma, trimming the photoresist layer225with a plasma to create an exposed portion215aof the hardmask layer215, removing the exposed portion215awith a plasma to create a trench guide opening227, and creating a trench230through the trench guide opening227with a plasma.
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DeLoach Juanita
Smith Brian A.
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilczewski M.
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